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May 1994
NDP708A / NDP708AE / NDP708B / NDP708BE NDB708A / NDB708AE / NDB708B / NDB708BE N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features
60 and 54A, 80V. RDS(ON) = 0.022 and 0.025. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175C maximum junction temperature rating. High density cell design (3 million/in) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
_____________________________________________________________________
D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-Gate Voltage (RGS < 1 M) Gate-Source Voltage - Continuous - Nonrepetitive (tP < 50 s) Drain Current - Continuous - Pulsed Total Power Dissipation @ TC = 25C Derate above 25C
TC = 25C unless otherwise noted
NDP708A NDP708AE NDB708A NDB708AE 80 80 20 40 60 180 150 1
NDP708B NDP708BE NDB708B NDB708BE
Units V V V V
54 162
A A W W/C C C
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
-65 to 175 275
(c) 1997 Fairchild Semiconductor Corporation
NDP708.SAM
Electrical Characteristics (T
Symbol EAS IAR Parameter Single Pulse Drain-Source Avalanche Energy
C
= 25C unless otherwise noted)
Conditions VDD = 25 V, ID = 60 A
Type NDP708AE NDP708BE NDB708AE NDB708BE
Min
Typ
Max 600 60
Units mJ A
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
Maximum Drain-Source Avalanche Current
OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate - Body Leakage, Forward Gate - Body Leakage, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance VGS = 0 V, ID = 250 A VDS = 80 V, VGS = 0 V VGS = 20 V, VDS = 0 V VGS = -20 V, VDS = 0 V VDS = VGS, ID = 250 A VGS = 10 V, ID = 30 A TJ = 125C VGS = 10 V, ID = 27 A TJ = 125C ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V ALL ALL TJ = 125C ALL ALL ALL TJ = 125C NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE gFS Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 10 V, ID = 30 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz ALL ALL ALL ALL DYNAMIC CHARACTERISTICS 60 2 1.4 2.6 1.9 0.016 0.025 80 250 1 100 -100 4 3.6 0.022 0.04 0.25 0.044 V A mA nA nA V V A
ON CHARACTERISTICS (Note 2)
54
A
16
33 2800 780 285 3600 1000 400
S pF pF pF
Ciss Coss Crss
NDP708.SAM
Electrical Characteristics (T
Symbol tD(ON) tr tD(OFF) tf Qg Qgs Qgd IS Parameter Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
C
= 25C unless otherwise noted)
Conditions VDD = 40 V, ID = 60 A, VGS = 10 V, RGEN = 5
Type ALL ALL ALL ALL
Min
Typ 15 143 58 108 94 16 51
Max 25 230 90 180 130
Units nS nS nS nS nC nC nC
SWITCHING CHARACTERISTICS (Note 2)
VDS = 64 V, ID = 60 A, VGS = 10 V
ALL ALL ALL NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE
DRAIN-SOURCE DIODE CHARACTERISTICS Maximum Continuos Drain-Source Diode Forward Current 60 A
54
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
NDP708A NDP708AE NDB708A NDB708AE NDP708B NDP708BE NDB708B NDB708BE
180
A
162
A
VSD
(Note 2)
Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Current
VGS = 0 V, IS = 30 A VGS = 0 V, IS = 60 A, dIS/dt = 100 A/s
ALL TJ = 125C ALL ALL
0.91 0.82 98 6.5
1.3 1.2 140 10
V V ns A
trr Irr RJC RJA
THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient ALL ALL 1 62.5 C/W C/W
Notes: 1. NDP708A/708B and NDB708A/708B are not rated for operation in avalanche mode. 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
NDP708.SAM
Typical Electrical Characteristics
120 2
V GS = 20V
I D , DRAIN-SOURCE CURRENT (A) 100
10
8.0 7.0
R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE
1.8 1.6 1.4 1.2
V
GS
= 5V 6.0 7.0 8.0 10
80
6.0
60
40
5.0
1 0.8 0.6
20
20
4.0
0 0 1 V
DS
2 3 , DRAIN-SOURCE VOLTAGE (V)
4
5
0
20
40 60 80 I , DRAIN CURRENT (A)
D
100
120
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
2.4
2
ID = 30A
DRAIN-SOURCE ON-RESISTANCE 2 DRAIN-SOURCE ON-RESISTANCE
V
1.8 1.6 1.4 1.2
GS
= 10V TJ = 125C
V GS = 10V
R DS(on), NORMALIZED
R DS(ON) , NORMALIZED
1.6
1.2
25C
1 0.8 0.6 0 20 40 60 I D , DRAIN CURRENT (A) 80 100
0.8
-55C
0.4 -50
-25
0
25 50 75 100 125 TJ , JUNCTION TEMPERATURE (C)
150
175
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
60 GATE-SOURCE THRESHOLD VOLTAGE (V)
1.2
V DS = 10V
50 I D, DRAIN CURRENT (A)
TJ = -55C
25 125
V DS = V
1.1 1 0.9 0.8 0.7 0.6 0.5 -50
GS
I D = 250A
40
30
20
10
0 2 3 V
GS
Vth , NORMALIZED
4
5
6
7
-25
0
, GATE TO SOURCE VOLTAGE (V)
25 50 75 100 125 T J , JUNCTION TEMPERATURE (C)
150
175
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDP708.SAM
Typical Electrical Characteristics (continued)
1.15 DRAIN-SOURCE BREAKDOWN VOLTAGE (V)
100
I D = 250A
1.1
50 I S , REVERSE DRAIN CURRENT (A)
V GS = 0V
BV DSS , NORMALIZED
10
TJ = 125C 25C -55C
1.05
2 1
1
0.95
0.1
0.9 -50
-25
0 T J
25 50 75 100 125 , JUNCTION TEMPERATURE (C)
150
175
0.01 0.2
0.4 0.6 0.8 1 1.2 VSD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
20
5000
C iss
VGS , GATE-SOURCE VOLTAGE (V) 3000 2000 CAPACITANCE (pF) 15
I D = 60A
V DS = 12V
24 64
1000
C oss
10
500
C rss f = 1 MHz V GS = 0 V
100 1 2 V
DS
5
0 3 5 10 20 , DRAIN TO SOURCE VOLTAGE (V) 30 50 0 40 80 Q g , GATE CHARGE (nC) 120 160
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
VDD
t d(on)
t on tr
90%
t off t d(off)
90%
tf
VIN
D
RL V OUT
DUT
Output, Vout
VGS
10%
10% 90%
R GEN
Inverted
G
Input, Vin
S
10%
50%
50%
Pulse Width
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP708.SAM
Typical Electrical Characteristics (continued)
50 , TRANSCONDUCTANCE (SIEMENS)
T J = -55C
40
V GS = 1 0 V tp
L
+ V DD -
25C 125C
30
t p is adjusted to reach the desired peak inductive current, I L . BV DSS
20
tp IL
10
VDS = 10V
0 0 10 20 30 40 ID , DRAIN CURRENT (A) 50 60
V DD
g
Figure 13. Transconductance Variation with Drain Current and Temperature.
FS
Figure 14. Unclamped Inductive Load Circuit and Waveforms.
300 200 100 I D, DRAIN CURRENT (A)
S RD (O
N)
L im
it
10 10 1m s 0
s
s
20 10 5 2 1 0.5 1 2 3
10 10
ms
0m DC s
V GS = 20V SINGLE PULSE T C = 25C
5 10 20 30 VDS , DRAIN-SOURCE VOLTAGE (V))
80
150
Figure 15. Maximum Safe Operating Area.
1 TRANSIENT THERMAL RESISTANCE 0.5 0.3
0.2 D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
R JC (t) = r(t) * RJC R JC = 1.0 C/W
0.1
0.05 P(pk)
0.05 0.03
0.02 0.01
t1
t2
0.02
Single Pulse
TJ - T C = P * R JC (t) Duty Cycle, D = t 1 /t2 0.1 0.2 0.5 1 2 5 t 1 ,TIME (ms) 10 20 50 100 200 500 1000
0.01 0.01
0.02
0.05
Figure 16. Transient Thermal Response Curve.
NDP708.SAM

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